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首页> 外文期刊>Plasma Science, IEEE Transactions on >Evaluation of a Pulsed Ultraviolet Light-Emitting Diode for Triggering Photoconductive Semiconductor Switches
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Evaluation of a Pulsed Ultraviolet Light-Emitting Diode for Triggering Photoconductive Semiconductor Switches

机译:触发光电导半导体开关的脉冲紫外发光二极管的评估

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摘要

The power output, forward voltage, conversion efficiency, and spectral characteristics of a 365 nm ultraviolet light-emitting diode (LED) were measured for applications of triggering wide-bandgap photoconductive switches for pulsed power applications. Pulsed currents through the LED ranged from 125 mA up to 2.2 A at widths from 10 up to several seconds. Using time-resolved electroluminescence spectroscopy, peak emission was observed to occur at 368.5 nm for short pulses with a red-shift to 371.8 nm for pulses 8 s in duration. A peak light output of 4.1 W was measured for short pulses () of 2.12 A, corresponding to six times the rated output specification. The LED was used to trigger a high-voltage photoconductive semiconductor switch (PCSS) at voltages up to 6 kV into a high-impedance load. The 365 nm LED is a promising candidate for optical triggering of PCSS devices.
机译:测量了365 nm紫外发光二极管(LED)的功率输出,正向电压,转换效率和光谱特性,以用于触发宽带隙光电导开关,以用于脉冲功率应用。通过LED的脉冲电流范围为125 mA至2.2 A,宽度为10至几秒钟。使用时间分辨电致发光光谱法,观察到短脉冲在368.5 nm处出现峰值发射,持续8 s的脉冲红移到371.8 nm。对于2.12 A的短脉冲(),测量到4.1 W的峰值光输出,相当于额定输出规格的六倍。 LED用于触发高达6 kV电压的高压光电导半导体开关(PCSS)进入高阻抗负载。 365 nm LED是PCSS器件光触发的有希望的候选者。

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