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首页> 外文期刊>Plasma Science, IEEE Transactions on >A Ridge-Loaded Sine Waveguide for G -Band Traveling-Wave Tube
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A Ridge-Loaded Sine Waveguide for G -Band Traveling-Wave Tube

机译：用于G波段行波管的脊式正弦波导管

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摘要

A novel slow-wave structure (SWS), named ridge-loaded sine waveguide (RLSWG), has been proposed to develop the wideband high-power terahertz traveling-wave tube (TWT). The slow-wave characteristics of the RLSWG SWS, including dispersion properties and interaction impedance, are analyzed by using the 3-D electromagnetic simulation software Ansoft high frequency structure simulator (HFSS). From our calculation, the average interaction impedance of the RLSWG SWS at 0.22 THz is 42.2% higher than the conventional SWG SWS. Meanwhile, the simulation results demonstrate that the RLSWG SWS possesses low ohmic losses and reflection. Moreover, the particle-in-cell (PIC) simulation results reveal that, with the cylindrical electron beam of 20.9 kV and 45 mA, the output power and electron efficiency of the RLSWG TWT at the typical frequency of 0.22 THz can reach 52.1 W and 5.54%, respectively. In addition, the 3-dB bandwidth of the RLSWG TWT exceeds 25 GHz. Compared with the SWG TWT, the RLSWG TWT has the shorter tube length and can generate the larger output power.
机译：为了开发宽带大功率太赫兹行波管（TWT），提出了一种新型的慢波结构（SWS），称为脊加载正弦波导（RLSWG）。使用3-D电磁仿真软件Ansoft高频结构仿真器（HFSS）分析了RLSWG SWS的慢波特性，包括色散特性和相互作用阻抗。根据我们的计算，RLSWG SWS在0.22 THz时的平均相互作用阻抗比常规SWG SWS高42.2％。同时，仿真结果表明，RLSWG SWS具有较低的欧姆损耗和反射率。此外，单元中粒子（PIC）仿真结果表明，在20.9 kV和45 mA的圆柱形电子束下，RLSWG TWT在典型的0.22 THz频率下的输出功率和电子效率可以达到52.1 W，并且分别为5.54％。此外，RLSWG TWT的3 dB带宽超过25 GHz。与SWG TWT相比，RLSWG TWT的管长更短，并且可以产生更大的输出功率。

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  • 来源
    《Plasma Science, IEEE Transactions on》 |2016年第11期|2832-2837|共6页
  • 作者

    Luqi Zhang; Yanyu Wei; Guo Guo; Chong Ding; Yuanyuan Wang; Xuebing Jiang; Guoqing Zhao; Jin Xu; Wenxiang Wang; Yubin Gong;

  • 作者单位

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Impedance; Dispersion; Electron beams; Power generation; Electron tubes; Metals; Integrated circuit modeling;

    机译：阻抗;色散;电子束;发电;电子管;金属;集成电路建模;

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