首页> 外文期刊>IEEE Transactions on Plasma Science >A Terahertz Electronic Source Based on the Spoof Surface Plasmon With Subwavelength Metallic Grating
【24h】

A Terahertz Electronic Source Based on the Spoof Surface Plasmon With Subwavelength Metallic Grating

机译:基于具有亚波长金属光栅的欺骗表面等离激元的太赫兹电子源

获取原文
获取原文并翻译 | 示例

摘要

A terahertz electronic source based on the spoof surface plasmon (SSP) with 2-D subwavelength metallic grating is presented. The SSP dispersion relation of plasmonic grating is derived by a simplified modal expansion method, and the coupling and interaction between the SSP and the electron beam is studied by particle-in-cell simulation. The results reveal that the output performance highly depends on the location of electron beam from grating surface. For an injected electron beam with 19.15 kV and 0.5 A, the SSP output power can reach 22.7 W for the optimized distance of the beam from the grating surface at a frequency near 1 THz for the given structure. Besides, the influence of different electron beam parameters on output power is also investigated and we find that pulse electron beam is preferable than continuous electron beam for good performance. There is an optimized operation frequency for the given beam voltage. Furthermore, output performance can be improved by changing grating structure parameters. By decreasing the grating groove filling factor from 0.8 to 0.2, the SSP output power can be increased from 17.2 to 23.6 W. The SSP power can also be significantly enhanced from 14 to 28.6 W using shallow grating with a groove depth changing from 76 to 56 for the optimized operation frequency with the same electron beam. The present work may provide a new avenue to obtain powerful THz electronic sources.
机译:提出了一种基于带有二维亚波长金属光栅的欺骗表面等离子体激元(SSP)的太赫兹电子源。通过简化的模态展开方法推导了等离激元光栅的SSP色散关系,并通过粒子内模拟研究了SSP与电子束之间的耦合和相互作用。结果表明,输出性能高度依赖于来自光栅表面的电子束的位置。对于19.15 kV和0.5 A的注入电子束,对于给定结构,在接近1 THz的频率下,对于束距光栅表面的最佳距离,SSP输出功率可以达到22.7W。此外,还研究了不同的电子束参数对输出功率的影响,发现脉冲电子束比连续电子束具有更好的性能。对于给定的射束电压,存在最佳的工作频率。此外,通过改变光栅结构参数可以提高输出性能。通过将光栅凹槽填充系数从0.8降低到0.2,SSP输出功率可以从17.2 W增加到23.6W。使用凹槽深度从76变为56的浅光栅,SSP功率也可以从14 W显着提高到28.6W。在相同的电子束下优化工作频率。当前的工作可能为获得强大的太赫兹电子源提供一条新途径。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号