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机译:HBr / Ar和Cl2 sub> / Ar电感耦合等离子体中TiO2 sub>薄膜的刻蚀特性及机理
Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam, 339-700, Republic of Korea;
Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., Ivanovo, 153000, Russia;
Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam, 339-700, Republic of Korea;
Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam, 339-700, Republic of Korea;
University of Science and Technology, Electronics and Telecommunications Research Institute, 161 Gajung-Dong, Yusong-Gu, Daejon, 305-350, Republic of Korea;
Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam, 339-700, Republic of Korea;
TiO2; HBr/Ar plasma; Cl2/Ar plasma; Etching mechanism;
机译:Ga掺杂的ZnO薄膜在电感耦合HBr / X(X = Ar,He,N_2,O_2)等离子体中的刻蚀特性及机理
机译:电感耦合的HBr-He,Ar,N-2,O-2等离子体中TiSbTe薄膜的腐蚀特性及机理
机译:HBr / Cl_2 / Ar电感耦合等离子体中TiO_2薄膜的刻蚀特性及机理
机译:Cl_2 / C_2F_6 / Ar和HBr / Ar等离子体中Pb(Zr_xTi_(1-x)O_3薄膜的感应耦合等离子体刻蚀
机译:用于加工铌超导射频空腔的氩气和Ar / Cl2等离子体的表征
机译:利用ArO2和(Ar + O2)气体进行射频等离子体处理PVDF薄膜以改善聚吡咯粘合性的研究
机译:使用HBr / Ar / CHF3GAS混合物的电感耦合等离子体蚀刻ZnO薄膜的蚀刻特性