首页> 外文期刊>Physical Review. B, Condensed Matter >Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe_2O_4/Al_2O_3/Si(111) films studied by x-ray magnetic circular dichroism
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Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe_2O_4/Al_2O_3/Si(111) films studied by x-ray magnetic circular dichroism

机译:通过X射线磁圆形二色性研究的外延COFE_2O_4 / AL_2O_3 / SI(111)膜中磁死层的电子结构和磁性。

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摘要

Epitaxial CoFe_2O_4/Al_2O_3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe_2O_4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe_2O_4/Al_2O_3 interface is necessary. In this paper, we study the cation distribution, electronic structures, and the magnetic properties of CoFe_2O_4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe_2O_4(111)/Al_2O_3(111)/Si(111) structures using soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) combined with clustermodel calculation. The magnetization of CoFe_2O_4 measured by XMCD gradually decreases with decreasing thickness d, and finally, a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions, which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe_2O_4/Al_2O_3 interface originates from various complex networks of superexchange interactions through the change in the cation distribution and electronic structure. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that the ferrimagnetic order of the magnetically dead layer at the CoFe_2O_4/Al_2O_3 interface is partially restored by increasing the thickness from d = 1.4 to 2.3 nm.
机译:由于CoFe_2O_4的旋转过滤器效果,预计外延CoFe_2O_4 / Al_2O_3双层预计将是高效的旋转注射器进入Si。为了利用该系统的全部潜力,需要了解Cofe_2O_4 / AL_2O_3接口处的磁性死层的微观起源是必要的。在本文中,我们研究了外延COFE_2O_4(111)/ AL_2O_3(111)/ AL_2O_3中的各种厚度(厚度d = 1.4,2.3,4,4,4,4,4,4,4,4,4.3)的COFE_2O_4(111)层的阳离子分布,电子结构和磁性特性。 111)/ Si(111)使用软X射线吸收光谱(XAs)和X射线磁性圆形二色(XMCD)与ClusterModel计算组合。通过XMCD测量的CoFe_2O_4的磁化随着厚度d的降低而逐渐减小,最后,在d = 1.4nm处清楚地检测到磁死层。磁死层具有令人沮丧的磁相互作用,从300和6 K之间的磁化之间的比较揭示。通过使用配置 - 交互聚类模型计算来源,D的降低导致逆正常的降低尖晶石结构比也降低了八面体位点的Fe的平均值。这些结果强烈表示Cofe_2O_4 / AL_2O_3接口处的磁死层通过阳离子分布和电子结构的变化来源于超越相互作用的各种复杂网络。此外,根据D = 1.4和2.3nm之间的磁性特性的比较,发现CoFe_2O_4 / Al_2O_3接口处的磁性死层的含铁磁性阶数通过增加D = 1.4至2.3nm的厚度而部分恢复。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2017年第10期|104410.1-104410.11|共11页
  • 作者单位

    Department of Electrical Engineering and Information Systems The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

    Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Materials Sciences Research Center Japan Energy Atomic Agency Sayo Hyogo 679-5148 Japan;

    Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Department of Quantum Matters ADSM Hiroshima University Higashi-Hiroshima 739-8530 Japan;

    Materials Sciences Research Center Japan Energy Atomic Agency Sayo Hyogo 679-5148 Japan;

    Materials Sciences Research Center Japan Energy Atomic Agency Sayo Hyogo 679-5148 Japan Department of Physics Kyoto Sangyo University Motoyama Kamigamo Kita-Ku Kyoto 603-8555 Japan;

    Department of Electrical Engineering and Information Systems The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan Center for Spintronics Research Network Graduate School of Engineering The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

    Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Department of Electrical Engineering and Information Systems The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan Institute for Innovation in International Engineering Education The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

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