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机译:基于HGTE的三维拓扑绝缘体的带结构
Institute of Solid State Physics Vienna University of Technology 1040 Vienna Austria;
Institute of Solid State Physics Vienna University of Technology 1040 Vienna Austria;
Institute of Solid State Physics Vienna University of Technology 1040 Vienna Austria;
Rzhanov Institute of Semiconductor Physics and Novosibirsk Stale University Novosibirsk 630090 Russia;
Rzhanov Institute of Semiconductor Physics and Novosibirsk Stale University Novosibirsk 630090 Russia;
Rzhanov Institute of Semiconductor Physics and Novosibirsk Stale University Novosibirsk 630090 Russia;
Dresden High Magnetic Field Laboratory (HLD-EMFL) Helmholtz-Zentrum Dresden-Rossendorf 01328 Dresden Germany Institute of Theoretical Physics Technische Universitat Dresden 01062 Dresden Germany;
Institute of Solid State Physics Vienna University of Technology 1040 Vienna Austria;
机译:不同化学计量组合物三维拓扑绝缘子的电子带结构
机译:不同化学计量组合物三维拓扑绝缘子的电子带结构
机译:超高磁场光谱揭示三维拓扑绝缘体Bi_2Se_3的能带结构
机译:角度分辨的光曝光光谱研究在磁杂质存在下拓扑绝缘子Bi_2se_3的电子带结构
机译:探测拓扑绝缘体薄膜和拓扑绝缘体/铁磁体(TI / FM)异质结构表面状态的磁传输方法。
机译:拓扑绝缘体BiSbTe1.25Se1.75的能带结构
机译:带弯曲驱动在三维拓扑绝缘体和三维法向绝缘体之间的界面上结合电子态的演化