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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Quantitative analysis of the electronic decoupling of an organic semiconductor molecule at a metal interface by a monolayer of hexagonal boron nitride
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Quantitative analysis of the electronic decoupling of an organic semiconductor molecule at a metal interface by a monolayer of hexagonal boron nitride

机译:六边形氮化物单层含金属界面上有机半导体分子电子去耦的定量分析

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摘要

The adsorption geometry, the electronic properties, and the adsorption energy of the prototype organic molecule 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on a monolayer of hexagonal boron nitride (hBN) grown on the Cu(111) surface were determined experimentally. The perylene core is at a large height of 3.37 angstrom and only a minute downward displacement of the functional anhydride groups (0.07 angstrom) occurs, yielding adsorption heights that agree with the sum of the involved van der Waals radii. Thus, already a single hBN layer leads to a decoupled (physisorbed) molecule, contrary to the situation on the bare Cu(111) surface.
机译:原型有机分子3,4,9,10-10-鲍萘四羧酸二酐(PTCDA)在Cu(111)表面生长的单层六边形氮化物(HBN)上的原型有机分子3,4,9,10-10-鲍苯二羧酸二酐(PTCDA)的吸附几何形状,电子性质和吸附能量是通过实验确定。前核的高度为3.37埃,并且发生官能酐基团(0.07埃)的微小位移,产生吸附高度,其与所涉及的范德瓦尔斯半径的总和一致。因此,已经是单个HBN层导致去耦(物吸收)分子,与裸铜(111)表面上的情况相反。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics 》 |2019年第12期| 121404.1-121404.6| 共6页
  • 作者单位

    Univ Bonn Inst Phys & Theoret Chem Wegelerstr 12 D-53115 Bonn Germany;

    Univ Bonn Inst Phys & Theoret Chem Wegelerstr 12 D-53115 Bonn Germany;

    Univ Bonn Inst Phys & Theoret Chem Wegelerstr 12 D-53115 Bonn Germany;

    Univ Bonn Inst Phys & Theoret Chem Wegelerstr 12 D-53115 Bonn Germany;

    Forschungszentrum Julich Peter Grunberg Inst PGI 3 D-52425 Julich Germany|Fundamentals Future Informat Technol JARA D-52425 Julich Germany;

    Forschungszentrum Julich Peter Grunberg Inst PGI 3 D-52425 Julich Germany|Fundamentals Future Informat Technol JARA D-52425 Julich Germany;

    Forschungszentrum Julich Peter Grunberg Inst PGI 3 D-52425 Julich Germany|Fundamentals Future Informat Technol JARA D-52425 Julich Germany;

    Forschungszentrum Julich Peter Grunberg Inst PGI 3 D-52425 Julich Germany|Fundamentals Future Informat Technol JARA D-52425 Julich Germany;

    Forschungszentrum Julich Peter Grunberg Inst PGI 3 D-52425 Julich Germany|Fundamentals Future Informat Technol JARA D-52425 Julich Germany;

    Forschungszentrum Julich Peter Grunberg Inst PGI 3 D-52425 Julich Germany|Fundamentals Future Informat Technol JARA D-52425 Julich Germany;

    Univ Bonn Inst Phys & Theoret Chem Wegelerstr 12 D-53115 Bonn Germany;

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