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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Quantitative analysis of the electronic decoupling of an organic semiconductor molecule at a metal interface by a monolayer of hexagonal boron nitride
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Quantitative analysis of the electronic decoupling of an organic semiconductor molecule at a metal interface by a monolayer of hexagonal boron nitride

机译:六方氮化硼单层对有机半导体分子在金属界面电子解耦的定量分析

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摘要

The adsorption geometry, the electronic properties, and the adsorption energy of the prototype organic molecule 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on a monolayer of hexagonal boron nitride (hBN) grown on the Cu(111) surface were determined experimentally. The perylene core is at a large height of 3.37 angstrom and only a minute downward displacement of the functional anhydride groups (0.07 angstrom) occurs, yielding adsorption heights that agree with the sum of the involved van der Waals radii. Thus, already a single hBN layer leads to a decoupled (physisorbed) molecule, contrary to the situation on the bare Cu(111) surface.
机译:Cu(111)表面生长的六方氮化硼(hBN)单层上的原型有机分子3,4,9,10-per四羧酸二酐(PTCDA)的吸附几何形状,电子性质和吸附能为实验确定。 ylene核的高度很高,为3.37埃,官能酸酐基团仅发生微小的向下位移(0.07埃),产生的吸附高度与所涉及的范德华半径之和一致。因此,与裸露的Cu(111)表面上的情况相反,单个hBN层已经导致解耦(物理吸附)分子。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics 》 |2019年第12期| 121404.1-121404.6| 共6页
  • 作者单位

    Univ Bonn, Inst Phys & Theoret Chem, Wegelerstr 12, D-53115 Bonn, Germany;

    Univ Bonn, Inst Phys & Theoret Chem, Wegelerstr 12, D-53115 Bonn, Germany;

    Univ Bonn, Inst Phys & Theoret Chem, Wegelerstr 12, D-53115 Bonn, Germany;

    Univ Bonn, Inst Phys & Theoret Chem, Wegelerstr 12, D-53115 Bonn, Germany;

    Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany|Fundamentals Future Informat Technol, JARA, D-52425 Julich, Germany;

    Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany|Fundamentals Future Informat Technol, JARA, D-52425 Julich, Germany;

    Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany|Fundamentals Future Informat Technol, JARA, D-52425 Julich, Germany;

    Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany|Fundamentals Future Informat Technol, JARA, D-52425 Julich, Germany;

    Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany|Fundamentals Future Informat Technol, JARA, D-52425 Julich, Germany;

    Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany|Fundamentals Future Informat Technol, JARA, D-52425 Julich, Germany;

    Univ Bonn, Inst Phys & Theoret Chem, Wegelerstr 12, D-53115 Bonn, Germany;

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