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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Shubnikov-de Haas and de Haas-van Alphen oscillations in the topological semimetal CaAl_4
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Shubnikov-de Haas and de Haas-van Alphen oscillations in the topological semimetal CaAl_4

机译:拓扑半金属CaAl_4中的Shubnikov-de Haas和de Haas-van Alphen振荡

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We report the magnetotransport properties of CaAl4 single crystals with C2/m structure at low temperature. CaAl4 exhibits large unsaturated magnetoresistance similar to 3000% at 2.5 K and 14 T. The nonlinear Hall resistivity is observed, which indicates the multi-band feature. The first-principles calculations show the electron-hole compensation and the complex Fermi surface in CaAl4, to which the two-band model with over-simplified carrier mobility can't completely apply. Evident quantum oscillations have been observed with B perpendicular to ab and B//ab configurations, from which the nontrivial Berry phase is extracted by the multi-band Lifshitz-Kosevich formula fitting and Landau level index fan diagram. The calculations also elucidate that CaAl4 possesses a Dirac nodal line type band structure around the Gamma point in the Z-Gamma-L plane, which is protected by the mirror symmetry as well as the space inversion and time reversal symmetries. Once the spin-orbit coupling is included, the crossed nodal line opens a negligible gap (less than 3 meV). The Z(2) invariant of CaAl4 equals 1, indicating its nontrivial topological properties. The open-orbit topology is also found in the electron-type Fermi surfaces by the first-principles calculations, which is believed to help enhance the magnetoresistance observed.
机译:我们报告了低温下具有C2 / m结构的CaAl4单晶的磁输运性质。 CaAl4在2.5 K和14 T下表现出较大的不饱和磁阻,与3000%相似。观察到非线性霍尔电阻率,这表明具有多频带特性。第一性原理计算显示了CaAl4中的电子空穴补偿和复杂的费米表面,而过分简化的载流子迁移率的两波段模型不能完全应用。在垂直于ab和B // ab构型的B处观察到明显的量子振荡,通过多频带Lifshitz-Kosevich公式拟合和Landau能级扇形图从中提取非平凡的Berry相。计算还阐明,CaAl4在Z-Gamma-L平面的Gamma点周围具有Dirac节点线型能带结构,该结构受镜面对称以及空间反转和时间反转对称性的保护。一旦包括自旋轨道耦合,交叉的节点线就会产生可忽略的间隙(小于3 meV)。 CaAl4的Z(2)不变量等于1,表明其非平凡的拓扑特性。通过第一性原理计算,在电子型费米表面中也发现了开轨拓扑,这被认为有助于增强观察到的磁阻。

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