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First-principles calculations for the electronic band structures of small diameter single-wall carbon nanotubes

机译:小直径单壁碳纳米管电子能带结构的第一性原理计算

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We present first-principles calculations on the band structures of 40 different small diameter (d) single-wall carbon nanotubes (SWCNTs), including 14 chiral ones, employing density functional theory (DFT) within the local density approximation (LDA), using the Vienna ab initio simulation package (VASP). The band gaps are calculated and discussed for all of the tubes. From small to large diameters, the gap of semiconducting zigzag tubes first increases, then reaches a maximum of about 1 eV for (11,0), after which it decreases, approximately as 1 / d, showing a "buckling" around this average behavior. The smallest diameter zigzag tubes are all metallic, due to σ- π mixing caused by high curvature. The Fermi wave-vector of armchair tubes shows a downshift from its ideal, zone folding expected value; this shift is proportional to 1/d~2. Eight of the ZF-metallic tubes (4 zigzags, 4 chirals) show a small gap in the band structure. For the zigzag tubes, this band gap is roughly given by the formula Δ = 1.99/d~2 + 140.9 / d~4 (Δ in eV, d in A). The appearance of the 1 / d~4 higher order correction term is due to high curvature at small diameters, however it's apparently overestimated in our calculations. This overestimation can likely be eliminated by considering many-electron effects.
机译:我们使用局部密度近似(LDA)中的密度泛函理论(DFT),对40种不同的小直径(d)单壁碳纳米管(SWCNT)的能带结构进行了第一性原理计算,包括14个手性碳纳米管。维也纳从头开始仿真程序包(VASP)。计算并讨论了所有管的带隙。从小直径到大直径,半导体之字形管的间隙先增大,然后对于(11,0)达到最大约1 eV,此后减小,大约为1 / d,表明在该平均行为附近出现“弯曲” 。由于高曲率引起的σ-π混合,最小直径的曲折管全部是金属的。扶手椅管的费米波矢显示出其理想的,区域折叠的期望值的下移;该偏移与1 / d〜2成正比。 ZF金属管中的八个(4个之字形,4个手性)在能带结构中显示出很小的间隙。对于之字形管,该带隙大致由公式Δ= 1.99 / d〜2 + 140.9 / d〜4(Δ以eV表示,d以A表示)给出。 1 / d〜4高阶校正项的出现是由于在较小直径下的高曲率,但是在我们的计算中显然高估了它。考虑到多电子效应,可以消除这种高估。

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