首页> 外国专利> MANUFACTURING METHOD OF SINGLE-WALL CARBON NANOTUBE, SINGLE-WALL CARBON NANOTUBE, AND MANUFACTURING METHOD OF ELECTRONIC ELEMENT

MANUFACTURING METHOD OF SINGLE-WALL CARBON NANOTUBE, SINGLE-WALL CARBON NANOTUBE, AND MANUFACTURING METHOD OF ELECTRONIC ELEMENT

机译:单壁碳纳米管,单壁碳纳米管的制造方法和电子元件的制造方法

摘要

PPROBLEM TO BE SOLVED: To provide a manufacturing method of a single-wall carbon nanotube which can be suitably used for easily manufacturing a high quality single-wall carbon nanotube having a controlled structure, containing a single-wall carbon nanotube of a very small diameter, and having a very narrow distribution of the diameter. PSOLUTION: In this manufacturing method, the single-wall carbon nanotube is grown by chemical vapor deposition method using an alcohol such as ethanol or a gas obtainable by vaporizing an aqueous alcohol solution as a reaction gas. Reaction is carried out by introducing the gas obtained by evaporating the alcohol or the aqueous alcohol solution by spontaneous vaporization at the outside of the reaction zone of the chemical vapor deposition unit. The alcohol concentration of the aqueous alcohol solution is, for example, not lower than 50% but not higher than 95%. PCOPYRIGHT: (C)2007,JPO&INPIT
机译:

要解决的问题:提供一种单壁碳纳米管的制造方法,该方法可适用于容易地制造具有可控结构的高质量单壁碳纳米管,该单壁碳纳米管包含一种碳纳米管。直径很小,并且直径分布非常狭窄。

解决方案:在该制造方法中,单壁碳纳米管通过使用诸如乙醇之类的醇或通过将醇水溶液蒸发作为反应气体而获得的气体通过化学气相沉积法来生长。通过在化学气相沉积单元的反应区的外部引入通过自发蒸发来蒸发醇或醇水溶液而获得的气体来进行反应。醇水溶液的醇浓度例如为50%以上95%以下。

版权:(C)2007,日本特许厅&INPIT

著录项

  • 公开/公告号JP2007197306A

    专利类型

  • 公开/公告日2007-08-09

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP20060320340

  • 发明设计人 WAN UU;LIU YUN-QI;KAJIURA HISASHI;FU LEI;

    申请日2006-11-28

  • 分类号C01B31/02;H01J9/02;

  • 国家 JP

  • 入库时间 2022-08-21 21:13:24

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