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Ab initio study of the β-tin→Imma→sh phase transitions in silicon and germanium

机译:从头开始研究硅和锗中β-锡→Imma→sh的相变

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We have investigated the structural sequence of the high-pressure phases of silicon and germanium. We have focussed on the cd →β-tin → Imma →sh phase transitions. We have used the plane-wave pseudopotential approach to the density-functional theory implemented within the Vienna ab initio simulation package. We have determined the equilibrium properties of each structure and the values of the critical parameters including a hysteresis effect at the phase transitions. The order of the phase transitions has been obtained from the pressure dependence of the enthalpy and of the structure parameters. The commonly used tangent construction is shown to be very unreliable in this case. Our calculations identify a first-order phase transition from the cd to the β-tin and from the Imma to the sh phase, and they indicate the possibility of a second-order phase-transition from the β-tin to the Imma phase. Finally, we have derived the enthalpy barriers between the phases.
机译:我们研究了硅和锗的高压相的结构顺序。我们集中在cd→β-tin→Imma→sh相变。我们在维也纳从头模拟程序包中实现的密度泛函理论中使用了平面波伪势方法。我们已经确定了每个结构的平衡特性以及包括相变时的磁滞效应在内的关键参数的值。已经从焓和结构参数的压力依赖性获得了相变的顺序。在这种情况下,通常使用的切线结构显示为非常不可靠。我们的计算确定了从cd到β-锡以及从Imma到sh相的一阶相变,并且它们表明了从β-锡到Imma相的二阶相变的可能性。最后,我们得出了相之间的焓垒。

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