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Angle-resolved photoemission study of USb_2: The 5f band structure

机译:USb_2的角分辨光发射研究:5f能带结构

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摘要

Single crystal antiferromagnetic USb_2 was studied at 15 K by angle-resolved photoemission with an overall energy resolution of 24 meV. The measurements unambiguously show the dispersion of extremely narrow bands situated near the Fermi level. The peak at the Fermi level represents the narrowest feature observed in 5 f-electron photoemission to date. The natural linewidth of the feature just below the Fermi level is not greater than 10 meV. Normal emission data indicate a three dimensional aspect to the electronic structure of this layered material.
机译:通过角分辨光发射在15 K下研究了单晶反铁磁USb_2,其总能量分辨率为24 meV。测量清楚地显示了位于费米能级附近的极窄频带的色散。费米能级的峰代表了迄今为止在5 f电子光发射中观察到的最窄特征。刚好在费米能级以下的特征的自然线宽不大于10 meV。正常发射数据表明该层状材料的电子结构在三维方面。

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