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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Site-selective adsorption of C_2H_5OH and NO depending on the local structure or local electron density on the Si(111)-7 X 7 surface
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Site-selective adsorption of C_2H_5OH and NO depending on the local structure or local electron density on the Si(111)-7 X 7 surface

机译:C_2H_5OH和NO的定点吸附取决于Si(111)-7 X 7表面上的局部结构或局部电子密度

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The sticking probability of ethanol (C_2H_5OH) on a Si(111)-7 X 7 surface is entirely coverage independent, and the adsorption is suddenly stopped when three adatoms (half of the adatoms) are changed to Si-OC_2H_5 in every half unit cell. This Si(111)-7 X 7 surface saturated with C_2H_5OH, however, is active for the adsorption of NO. A more surprising fact is that the sticking probability of NO on this surface is equal to that on the virgin Si(111)-7 X 7 surface. That is, the sticking probability of C_2H_5OH and NO on a Si(111)-7 X 7 surface has no influence of the coverage of Si-adatoms with Si-OC_2H_5. From these results, we deduced that the dissociation of NO and C_2H_5OH takes place via the precursor state adsorption. The coverage of adatoms gives no effect on the sticking probability of NO and C_2H_5OH, the adsorption of NO on the faulted halves prefers that on unfaulted halves (F/U = 2.2~2.4), although no such preference was observed in the adsorption of C_2H_5OH (F/U = 1). N and O atoms formed by the dissociation of NO migrate over the surface and are finally trapped by Si-adatoms. On the other hand, adsorption of C_2H_5OH occurs by dissociating the precursor state molecule on an adatom-rest atom site, which is the final step of the adsorption. Therefore, the scanning tunneling microscopy image of C_2H_5OH reflects the structure of the sites, while that of NO reflects the electron density of sites. The physical meaning of the sticking probability, preferential adsorption on the faulted or unfaulted halves, and site selectivity of the center to corner adatoms in a half unit cell are discussed.
机译:乙醇(C_2H_5OH)在Si(111)-7 X 7表面上的粘附概率完全与覆盖无关,并且在每半个单元格中将三个吸附原子(一半吸附原子)更改为Si-OC_2H_5时,吸附突然停止。 。然而,该被C_2H_5OH饱和的Si(111)-7 X 7表面对于NO的吸附具有活性。一个更令人惊讶的事实是,NO在该表面上的粘附概率等于原始Si(111)-7 X 7表面上的粘附概率。即,C_2H_5OH和NO在Si(111)-7 X 7表面上的粘附概率对Si-OC_2H_5对硅原子的覆盖率没有影响。从这些结果,我们推断出NO和C_2H_5OH的离解是通过前体状态吸附发生的。吸附原子的覆盖率对NO和C_2H_5OH的黏附率没有影响,有缺陷的两半上NO的吸附优先于无缺陷的两半(F / U = 2.2〜2.4),尽管对C_2H_5OH的吸附没有这种偏好。 (F / U = 1)。由NO分解形成的N和O原子在表面上迁移,并最终被Si原子俘获。另一方面,C_2H_5OH的吸附是通过将前体状态分子在吸附原子的剩余原子位点上解离而发生的,这是吸附的最后一步。因此,C_2H_5OH的扫描隧道显微镜图像反映了位点的结构,而NO的扫描隧道显微镜图像反映了位点的电子密度。讨论了粘着概率的物理含义,在有缺陷或没有缺陷的半体上的优先吸附以及在半单元格中中心对角落吸附原子的位点选择性。

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