Aging behavior in single-domain Mn-doped BaTiO_3 crystals: Implication for a unified microscopic explanation of ferroelectric aging

摘要

The change of ferroelectric, dielectric, and piezoelectric properties with time, the ferroelectric aging phenomena, has been observed in most ferroelectrics. Phenomenologically, aging can be attributed to the gradual stabilization of ferroelectric domains by defects, but the microscopic origin of the domain stabilization has remained controversial. It is unclear whether the domain stabilization is a boundary effect (caused by domain-wall-pinning) or a volume effect (stabilization of the whole domain). In the present paper, we made a single-domain (domain-wall-free) Mn-doped BaTiO_3 single crystal and studied the aging behavior of its hysteresis loop. We found that after aging, the single-domain sample shows a significant increase in the coercive field, clearly indicating a strong stabilization of the single domain. Furthermore, the sample exhibits an abnormal double hysteresis loop, which corresponds to an interesting reversible domain switching process. These are direct evidence for the stabilization of single domain by aging. Our results preclude any explanation by the domain-wall-pinning effect and strongly suggest that the volume effect is the governing mechanism for the aging in hysteresis loop. We further show that the microscopic origin of the volume effect comes naturally from a general symmetry-conforming property of point defects. Such a microscopic mechanism can explain not only the aging in hysteresis loop (large signal aging) but also the aging in dielectric and piezoelectric constants (small signal aging), thus providing a unified microscopic explanation for all kinds of ferroelectric aging.