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Molecular dynamics simulation study of nanoscale passive oxide growth on Ni-Al alloy surfaces at low temperatures

机译:低温下Ni-Al合金表面纳米级被动氧化物生长的分子动力学模拟研究

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摘要

Oxidation kinetics of Ni-Al (100) alloy surface is investigated at low temperatures (300-600 K) and at different gas pressures using molecular dynamics (MD) simulations with dynamic charge transfer between atoms. Monte Carlo simulations employing the bond order simulation model are used to generate the surface segregated minimum energy initial alloy configurations for use in the MD simulations. In the simulated temperature-pressure-composition regime for Ni-Al alloys, we find that the oxide growth curves follow a logarithmic law beyond an initial transient regime. The oxidation rates for Ni-Al alloys were found to decrease with increasing Ni composition. Structure and dynamical correlations in the metal/oxide/gas environments are used to gain insights into the evolution and morphology of the growing oxide film. Oxidation of Ni-Al alloys is characterized by the absence of Ni-O bond formation. Oxide films formed on the various simulated metal surfaces are amorphous in nature and have a limiting thickness ranging from ~1.7 nm for pure Al to 1.1 nm for 15% Ni-Al surfaces. Oxide scale analysis indicates significant charge transfer as well as variation in the morphology and structure of the oxide film formed on pure Al and 5% Ni-Al alloy. For oxide scales thicker than 1 nm, the oxide structure in case of pure Al exhibits a mixed tetrahedral (AlO_4~37%) and octahedral (AlO_6~19%) environment, whereas the oxide scale on Ni-Al alloy surface is almost entirely composed of tetrahedral environment (AlO_4~60%) with very little AlO_6 ( < 1%). The oxide growth kinetic curves are fitted to Arrhenius-type plots to get an estimate of the activation energy barriers for metal oxidation. The activation energy barrier for oxidation on pure Al was found to be 0.3 eV lower than that on 5% Ni-Al surface. Atomistic observations as well as calculated dynamical correlation functions indicate a layer by layer growth on pure Al, whereas a transition from an initial island growth mode (< 75 ps) to a layer by layer mode ( > 100 ps) occurs in case of 5% Ni-Al alloy. The oxide growth on both pure Al and Ni-Al alloy surfaces occurs by inward anion and outward cation diffusions. The cation diffusion in both the cases is similar, whereas the anion diffusion in case of 5% Ni-Al is 25% lower than pure Al, thereby resulting in reduced self-limiting thickness of oxide scale on the alloy surface. The simulation findings agree well with previously reported experimental observations of oxidation on Ni-Al alloy surface.
机译:使用分子动力学(MD)模拟和原子间动态电荷转移,研究了低温(300-600 K)和不同气压下Ni-Al(100)合金表面的氧化动力学。使用键序模拟模型的蒙特卡洛模拟用于生成表面隔离的最小能量初始合金配置,以用于MD模拟。在模拟的Ni-Al合金温度-压力-组成条件下,我们发现氧化物生长曲线在初始瞬态范围之外遵循对数律。发现Ni-Al合金的氧化速率随着Ni组成的增加而降低。金属/氧化物/气体环境中的结构和动力学相关性可用于深入了解正在生长的氧化膜的演变和形态。 Ni-Al合金的氧化特征是不形成Ni-O键。在各种模拟金属表面上形成的氧化膜本质上是非晶态的,其极限厚度范围从纯Al的1.7nm到15%Ni-Al的1.1nm。氧化物垢分析表明,在纯Al和5%Ni-Al合金上形成的氧化膜具有明显的电荷转移以及形态和结构的变化。对于大于1 nm的氧化皮,纯Al情况下的氧化物结构呈现混合的四面体(AlO_4〜37%)和八面体(AlO_6〜19%)的环境,而Ni-Al合金表面的氧化皮几乎完全组成四面体环境(AlO_4〜60%)中的AlO_6很少(<1%)。将氧化物生长动力学曲线拟合到Arrhenius型图,以估算金属氧化的活化能垒。发现纯Al上的氧化活化能垒比5%Ni-Al表面上的活化能垒低0.3 eV。原子观测和计算的动力学相关函数表明纯Al上逐层生长,而在5%的情况下会发生从初始岛生长模式(<75 ps)到逐层模式(> 100 ps)的转变镍铝合金。纯Al和Ni-Al合金表面上的氧化物生长都是通过向内阴离子和向外阳离子扩散而发生的。两种情况下的阳离子扩散相似,而5%Ni-Al的情况下阴离子扩散比纯Al低25%,从而降低了合金表面氧化皮的自限厚度。模拟结果与先前报道的Ni-Al合金表面氧化的实验观察结果非常吻合。

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