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Quantum simulation of Fermi-Hubbard models in semiconductor quantum-dot arrays

机译:半导体量子点阵列中费米-哈伯德模型的量子模拟

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We propose a device for studying the Fermi-Hubbard model with long-range Coulomb interactions using an array of coupled quantum dots denned in a semiconductor two-dimensional electron-gas system. Bands above the lowest energy band are used to form the Hubbard model, so that a high average electron density may be used to implement the device. We find that depending on the average electron density, the system is well described by a one- or two-band Hubbard model. Our device design enables the control of the ratio of the Coulomb interaction to the kinetic energy of the electrons independently to the filling of the quantum dots, such that a large portion of the Hubbard phase diagram may be probed. Estimates of the Hubbard parameters suggest that a metal-Mott insulator quantum phase transition and a d-wave superconducting phase should be observable using current technologies.
机译:我们提出了一种装置,该装置使用在半导体二维电子气系统中定义的耦合量子点阵列来研究具有长距离库仑相互作用的费米-哈伯德模型。高于最低能带的能带用于形成Hubbard模型,因此可以使用高平均电子密度来实现该器件。我们发现,取决于平均电子密度,该系统可以通过一波段或两波段Hubbard模型很好地描述。我们的设备设计能够独立于量子点的填充来控制库仑相互作用与电子动能之比,从而可以探测到大部分的哈伯德相图。 Hubbard参数的估计表明,使用当前技术可以观察到金属-莫特绝缘子的量子相变和d波超导相。

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