Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems

摘要

We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cooldown, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range Coulomb interaction in the insulating regime, we find surprisingly little effect on the metallic behavior when we change the distance between the 2DHS and the nearby ground plane.