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Sharp magnetic field dependence of the two-dimensional Hall coefficient induced by classical memory effects

机译:经典记忆效应引起的二维霍尔系数的尖锐磁场依赖性

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We show that a sharp dependence of the Hall coefficient R on the magnetic field B arises in two-dimensional electron systems with strong scatterers. The phenomenon is due to classical memory effects. We analytically calculate the dependence of R on B for the case of scattering by antidots (modeled by hard disks of radius a), randomly distributed with a concentration n_01/a~2. We demonstrate that in very weak magnetic fields (ω_cT_(tr) ≤ n_0a~2), memory effects lead to a considerable renormaJization of the Boltzmann value of the Hall coefficient: δSR/R ~ 1. With increasing magnetic field, the relative correction to R decreases, then changes sign, and saturates at the value δR/R~-n_0a~2. We also discuss the effect of smooth disorder on the dependence of R on B.
机译:我们表明,在具有强散射体的二维电子系统中,霍尔系数R对磁场B的依赖性强。该现象是由于经典记忆效应引起的。我们通过解毒剂(由半径为a的硬盘建模)以浓度为n_0 1 / a〜2随机分布的解毒剂进行散射的情况下,分析计算R对B的依赖性。我们证明了在非常弱的磁场(ω_cT_(tr)≤n_0a〜2)中,记忆效应导致霍尔系数的Boltzmann值δSR/ R〜1大量重新归一化。随着磁场的增加,相对于R减小,然后改变符号,并在值δR/ R〜-n_0a〜2处饱和。我们还讨论了平滑障碍对R对B的依赖性的影响。

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