机译:非晶硅和微晶硅中缺陷密度与电荷载流子传输之间的关系
Forschungszentrum Juelich, Institute of Energy Research-Photovoltaic, 52425 Jiilich, Germany and National Science Center-Kharkov Institute of Physics and Technology, Cyclotron Science and Research Establishment, 61108 Kharkov, Ukraine;
Forschungszentrum Jtilich, Institute of Energy Research-Photovoltaic, 52425 Juelich, Germany;
Forschungszentrum Jtilich, Institute of Energy Research-Photovoltaic, 52425 Juelich, Germany;
National Science Center-Kharkov Institute of Physics and Technology, Cyclotron Science and Research Establishment, 61108 Kharkov, Ukraine;
National Science Center-Kharkov Institute of Physics and Technology, Cyclotron Science and Research Establishment, 61108 Kharkov, Ukraine;
National Science Center-Kharkov Institute of Physics and Technology, Cyclotron Science and Research Establishment, 61108 Kharkov, Ukraine;
charge carriers: generation; recombination; lifetime; and trapping; amorphous semiconductors; metallic glasses; glasses; disordered structures; amorphous and glassy solids; electron and positron radiation effects;
机译:无序硅中载流子的穿越时间测量:非晶,微晶和多孔
机译:扫描电荷瞬变显微镜分析非晶硅膜中微晶岛中的缺陷
机译:2MeV电子轰击的非晶和微晶硅薄膜太阳能电池吸收层缺陷密度的变化
机译:从氢化非晶硅到微晶硅的过渡中的电荷传输
机译:使用差分电容测量来计算纳米晶体和非晶硅器件中的缺陷密度。
机译:缺陷诱导发光猝灭与掺入硅纳米晶体中的磷的电荷载流子生成随尺寸的变化
机译:非晶硅和微晶硅中缺陷密度与电荷载流子传输之间的关系
机译:通过富集微晶硅改善非晶硅的电学和传输特性