提高非晶硅/微晶硅叠层太阳电池光稳定性的研究

摘要

如何提高硅基薄膜太阳电池的光稳定性是硅基薄膜太阳电池研究和产业化过程中非常重要的问题.为了提高非晶硅/微晶硅叠层电池的光稳定性,本文首先给出了良好光稳定性非晶硅项电池的结果,然后重点研究了N/P隧穿结和微晶硅底电池本征层硅烷浓度梯度对叠层电池光稳定性的影响.经过初步优化,连续光照1000 h后非晶硅/微晶硅叠层电池的最小光致衰退率只有7%.%Improving the light-soaking stability of silicon-based thin film solar cells is a very important issue for industrial production. In order to obtain high-efficiency a-Si：H/μc-Si：H tandem solar cells with good light-soaking stability, In this paper we first present the results about a-Si：H top solar ceU with high light-soakittg stability. Then we mainly investigate the influences of N/P tunnel junction and silane concentration （SC） profiling of c-Si：H i-layer on the light-soaking stability of a-Si：H/μc-Si：H tandem solar cells. Up to now we have been able to obtain a-Si：H/μc-Si：H tandem solar cell with a light-soaking degradation ratio of only 7%.