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Theoretical analysis of the chemical bonding and electronic structure of graphene interacting with Group IA and Group VIIA elements

机译:石墨烯与IA族和VIIA族元素相互作用的化学键合和电子结构的理论分析

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摘要

We propose a different class of materials, which can be viewed as graphene derivatives involving Group IA or Group VIIA elements, forming what we refer to as graphXene. We show that in several cases, large band gaps can be found to open up whereas in other cases, a semimetallic behavior is found. Formation energies indicate that under ambient conditions, sp~3 and mixed sp~2/sp~3 systems will form. The results presented allow us to propose that by careful tuning of the relative concentration of the adsorbed atoms, it should be possible to tune the band gap of graphXene to take any value between 0 and 6.4 eV.
机译:我们提出了另一类材料,可以将其视为涉及IA组或VIIA组元素的石墨烯衍生物,形成我们称为graphXene的材料。我们表明,在某些情况下,可以发现较大的带隙,而在其他情况下,则可以发现半金属行为。形成能表明,在环境条件下,将形成sp〜3和混合的sp〜2 / sp〜3系统。给出的结果使我们提出,通过仔细调节吸附原子的相对浓度,应该有可能将graphXene的带隙调整为0到6.4 eV之间的任何值。

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  • 来源
    《Physical review》 |2010年第8期|p.085433.1-085433.5|共5页
  • 作者单位

    Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-75120 Uppsala, Sweden;

    Laboratoire de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036), Institut Jean Barriol, Nancy Universite, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-les-Nancy, France;

    Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, NL-6525 AJ Nijmegen, The Netherlands;

    Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-75120 Uppsala, Sweden;

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  • 正文语种 eng
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  • 关键词

    density functional theory, local density approximation, gradient and other corrections; semiconductor compounds;

    机译:密度泛函理论;局部密度近似;梯度和其他校正;半导体化合物;

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