Spin torque and charge resistance of ferromagnetic semiconductor In and n domain walls

摘要

Charge resistance and spin torque are generated by coherent carrier transport through ferromagnetic 27r domain walls, and follow qualitatively different trends than for n domain walls. The charge resistance of lit domain walls reaches a maximum at an intermediate wall thickness, unlike it domain walls, whose resistance decreases monotonically with wall thickness. The peak amplitude of the spin torque and the optimal thickness of the domain wall to maximize torque for a 2n wall are more than twice as large as found for a it domain wall in the same material, producing a larger domain wall velocity for the lit wall and suggesting such walls may be preferable for magnetoelectronic devices incorporating domain wall motion.