Properties of self-assembled Bi nanolines on InAs(lOO) studied by core-level and valence-band photoemission, and first-principles calculations

摘要

We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated lnAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.