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Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers

机译:基于共振散射体的单层和双层石墨烯在有限密度下的直流电导率的统一描述

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摘要

We show that a coherent picture of the dc conductivity of monolayer and bilayer graphene at finite electronic densities emerges upon considering that strong short-range potentials are the main source of scattering in these two systems. The origin of the strong short-range potentials may lie in adsorbed hydrocarbons at the surface of graphene. The equivalence among results based on the partial-wave description of scattering, the Lippmann-Schwinger equation, and the T-matrix approach is established. Scattering due to resonant impurities close to the neutrality point is investigated via a numerical computation of the Kubo formula using a kernel polynomial method. We find that relevant adsorbate species originate impurity bands in monolayer and bilayer graphene close to the Dirac point. In the midgap region, a plateau of minimum conductivity of about e2/ h (per layer) is induced by the resonant disorder. In bilayer graphene, a large adsorbate concentration can develop an energy gap between midgap and high-energy states. As a consequence, the conductivity plateau is supressed near the edges and a "conductivity gap" takes place. Finally, a scattering formalism for electrons in biased bilayer graphene, taking into account the degeneracy of the spectrum, is developed and the dc conductivity of that system is studied.
机译:我们表明,考虑到强的短程电势是这两个系统中散射的主要来源,单层和双层石墨烯的直流电导率在有限的电子密度下会出现连贯的图像。强短程电势的起源可能在于石墨烯表面吸附的碳氢化合物。建立了基于散射的部分波描述,Lippmann-Schwinger方程和T矩阵方法的结果之间的等价关系。通过使用核多项式方法的久保公式的数值计算,研究了由于谐振杂质接近中性点而引起的散射。我们发现相关的吸附物种类在接近狄拉克点的单层和双层石墨烯中产生了杂质带。在中间间隙区域,共振紊乱引起了最小电导率的平稳状态,该电导率约为e2 / h(每层)。在双层石墨烯中,高浓度的吸附物会在中能态和高能态之间形成能隙。结果,电导率平台在边缘附近被抑制并且发生“电导率间隙”。最后,考虑到光谱的简并性,发展了在偏置的双层石墨烯中电子的散射形式,并研究了该系统的直流电导率。

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  • 来源
    《Physical review》 |2011年第16期|p.165402.1-165402.22|共22页
  • 作者单位

    Department of Physics and Center of Physics, University of Minho, P-4710-057, Braga, Portugal;

    Department of Physics and Center of Physics, University of Minho, P-4710-057, Braga, Portugal;

    Department of Physics, University of Gothenburg, S-412 96 Gothenburg, Sweden;

    Department of Physics, University of Central Florida, Orlando, Florida 32816, USA;

    Department of Physics and Center of Physics, University of Minho, P-4710-057, Braga, Portugal;

    Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA;

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