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High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

机译:拉曼光谱研究纤锌矿和岩盐氮化铟中的高压晶格动力学

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摘要

We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L~(1-) coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k • p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations.
机译:我们提出了在高静水压力下InN的实验和理论晶格动力学研究。我们在五个具有不同残余应变和自由电子浓度的InN外延层上进行拉曼散射测量。实验结果是根据纤锌矿InN(w-InN)和岩盐InN(rs-InN)的从头算晶格动力学计算得出的,作为压力的函数。比较了w-InN中光学模式的实验和理论压力系数,并分析了残余应变对测得的压力系数的作用。在本振带的情况下,我们考虑并考虑了双共振机制对w-InN中具有大波矢量的本振声子的选择性激励,对它的压力行为进行了分析和讨论。在重掺杂n型样品中观察到的L〜(1-)耦合模式的压力行为使我们能够估计w-InN中电子有效质量的压力依赖性。这样获得的结果与k•p理论非常吻合。研究了上冲程周期中纤锌矿-岩盐的相变和下冲程周期岩质-纤锌矿的相变,并根据DFT晶格动力学计算解释了两个相的拉曼光谱。

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  • 来源
    《Physical review》 |2013年第11期|115202.1-115202.13|共13页
  • 作者单位

    Institut Jaume Almera, Consell Superior d'Investigations Cientifiques, 08028 Barcelona, Catalonia, Spain;

    Institut Jaume Almera, Consell Superior d'Investigations Cientifiques, 08028 Barcelona, Catalonia, Spain;

    Instituto de Disehopara la Fabrication y Production Automatizada, MALTA Consolider Team-Universitat Politecnica de Valencia, 46022 Valencia, Spain;

    Departamento de Fisica Aplicada-ICMUV-MALTA Consolider Team, Universitat de Valencia, 46100 Burjassot, Valencia, Spain;

    Faculty of Science and Engineering, Ritsumeikan University, Shiga 525-8577, Japan;

    Faculty of Science and Engineering, Ritsumeikan University, Shiga 525-8577, Japan;

    Institut Jaume Almera, Consell Superior d'Investigations Cientifiques, 08028 Barcelona, Catalonia, Spain;

    Institut Jaume Almera, Consell Superior d'Investigations Cientifiques, 08028 Barcelona, Catalonia, Spain;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ⅱ-Ⅵ semiconductors; optical properties of bulk materials and thin films; infrared and raman spectra;

    机译:Ⅱ-Ⅵ半导体;散装材料和薄膜的光学性能;红外光谱和拉曼光谱;

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