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Numerical study of the optical nonlinearity of doped and gapped graphene: From weak to strong field excitation

机译:掺杂和带隙石墨烯光学非线性的数值研究:从弱场激发到强场激发

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摘要

Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser pulse. We discuss in detail the dependence of second harmonic generation, third harmonic generation, and the Kerr effects on the doping level, the gap, and the electric field amplitude. The numerical results for weak electric fields agree with those calculated from available analytic perturbation formulas. For strong electric fields when saturation effects are important, all the effective third order nonlinear response coefficients show a strong field dependence.
机译:在现象弛豫时间近似内,通过数值求解半导体Bloch方程,我们提取了在激光脉冲激发下掺杂石墨烯和带隙石墨烯的线性和非线性光学电导率。我们详细讨论了二次谐波产生,三次谐波产生以及克尔效应对掺杂水平,间隙和电场幅度的依赖性。弱电场的数值结果与从可用解析扰动公式计算得出的结果一致。对于饱和效应很重要的强电场,所有有效的三阶非线性响应系数都显示出很强的场依赖性。

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  • 来源
    《Physical review》 |2015年第23期|235307.1-235307.12|共12页
  • 作者单位

    Brussels Photonics Team (B-PHOT), Department of Applied Physics and Photonics (IR-TONA), Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussel, Belgium,Department of Physics and Institute for Optical Sciences, University of Toronto, 60 St. George Street, Toronto, Ontario, Canada M5S 1A7;

    Brussels Photonics Team (B-PHOT), Department of Applied Physics and Photonics (IR-TONA), Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussel, Belgium;

    Department of Physics and Institute for Optical Sciences, University of Toronto, 60 St. George Street, Toronto, Ontario, Canada M5S 1A7;

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