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Influence of elastically pinned magnetic domain walls on magnetization reversal in multiferroic heterostructures

机译:弹性钉扎磁畴壁对多铁异质结构中磁化反转的影响

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In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic subsystems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work, we investigate the influence of pinned magnetic domain walls on the magnetization reversal process in a Co_(40)Fe_(40)B_(20) wedge film that is coupled to a ferroelectric BaTiO_3 substrate via interface strain transfer. We show that the magnetic field direction can be used to select between two distinct magnetization reversal mechanisms, namely, (1) double switching events involving alternate stripe domains at a time or (2) synchronized switching of all domains. Furthermore, scaling of the switching fields with domain width and film thickness is also found to depend on the field orientation. These results are explained by considering the dissimilar energies of the two types of pinned magnetic domain walls that are formed in the system.
机译:在展现出铁电子系统与铁磁子系统之间完整畴相关性的弹性耦合多铁性异质结构中,磁畴壁牢固地固定在铁电畴边界的顶部。在这项工作中,我们研究了固定Co壁对Co_(40)Fe_(40)B_(20)楔膜中磁化反转过程的影响,该楔膜通过界面应变传递耦合到铁电BaTiO_3衬底上。我们表明,磁场方向可用于在两个不同的磁化反转机制之间进行选择,即,(1)一次涉及交替条带畴的两次切换事件,或(2)所有畴的同步切换。此外,还发现切换域与畴宽度和膜厚度的缩放取决于域的方向。通过考虑系统中形成的两种类型的固定磁畴壁的不同能量来解释这些结果。

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