Spin Torque, Tunnel-Current Spin Polarization, and Magnetoresistance in MgO Magnetic Tunnel Junctions

摘要

We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-like spin-polarized tunneling and reduced-surface-magnetism models of the TMR bias dependence, but is consistent with magnetic-state-dependent decay lengths in the tunnel barrier.