Direct Measurement of the Growth Mode of Graphene on SiC(0001) and SiC(0001)

摘要

We have determined the growth mode of graphene on SiC(0001) and SiC(0001) using ultrathin, isotopically labeled Si~(13)C "marker layers" grown epitaxially on the Si~(12)C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si face and C face), we find that the ~(13)C is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones.