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Measurement of the v = 1/3 Fractional Quantum Hall Energy Gap in Suspended Graphene

机译:悬浮石墨烯中v = 1/3的分数量子霍尔能隙的测量

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We report on magnetotransport measurements of multiterminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for v = 1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at -20 K at 14 T.
机译:我们报告了多末端悬浮石墨烯器件的磁传输测量。在低至2 T的磁场中会出现充分发展的整数量子霍尔态。在较高的磁场下,可以看到与分数量子霍尔态相对应的纵向电阻极小值和横向电阻平稳期的形成,其中最强烈的是v = 1/3。通过测量这些电阻最小值的温度依赖性,可以确定石墨烯中1/3分数态的能隙为-20 K和14T。

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