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Pinning Susceptibility: The Effect of Dilute, Quenched Disorder on Jamming

机译:钉住磁化率:稀释,淬火障碍对干扰的影响

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摘要

We study the effect of dilute pinning on the jamming transition. Pinning reduces the average contact number needed to jam unpinned particles and shifts the jamming threshold to lower densities, leading to a pinning susceptibility, chi(p). Our main results are that this susceptibility obeys scaling form and diverges in the thermodynamic limit as chi(p) alpha vertical bar phi - phi c(infinity) vertical bar-(gamma p) where phi c(infinity) is the jamming threshold in the absence of pins. Finite-size scaling arguments yield these values with associated statistical (systematic) errors gamma(p) = 1.018 +/- 0.026(0.291) in d = 2 and gamma(p) = 1.534 +/- 0.120(0.822) in d = 3. Logarithmic corrections raise the exponent in d = 2 to close to the d = 3 value, although the systematic errors are very large.
机译:我们研究了稀疏钉扎对干扰过渡的影响。钉扎减少了堵塞未钉扎颗粒所需的平均接触数,并将堵塞阈值更改为较低的密度,从而导致钉扎磁化率chi(p)。我们的主要结果是,这种敏感性遵循定标形式,并且在热力学极限上发散,如chi(p)alpha垂直条phi-phi c(无穷大)垂直条-(γp),其中phi c(infinity)是没有别针。有限大小的缩放参数会产生这些值,并伴随相关的统计(系统性)误差d = 2中的gamma(p)= 1.018 +/- 0.026(0.291),而d = 3中的gamma(p)= 1.534 +/- 0.120(0.822)尽管系统误差非常大,但对数校正将d = 2的指数提高到接近d = 3的值。

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  • 来源
    《Physical review letters》 |2016年第23期|235501.1-235501.5|共5页
  • 作者单位

    Swarthmore Coll, Dept Phys & Astron, Swarthmore, PA 19081 USA;

    Swarthmore Coll, Dept Phys & Astron, Swarthmore, PA 19081 USA;

    Swarthmore Coll, Dept Phys & Astron, Swarthmore, PA 19081 USA|Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA;

    Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA;

    Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA;

    Cornell Univ, Dept Phys, Ithaca, NY 14853 USA;

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