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首页> 外文期刊>Physica status solidi (a) Applications and materials science >Effects of the Annealing Temperature before Cooling under Magnetic Field on Perpendicular Exchange Coupling in (Pt/Co)5/NiO
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Effects of the Annealing Temperature before Cooling under Magnetic Field on Perpendicular Exchange Coupling in (Pt/Co)5/NiO

机译:(PT / CO)5 / NiO垂直交换耦合下磁场下冷却前的退火温度的影响

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摘要

The effects of the annealing temperature before cooling under a magnetic field onthe perpendicular exchange coupling in Pt/Co multilayers directly coupled to aNiO layer are studied in the NiO layer thickness range of 1–4 nm. The obtainedresults reveal that the exchange bias (EB) field and the magnetization reversalprocess depend on the NiO layer thickness as well as on the annealing temperature.Positive EB fields are observed, especially for 4 nm-thick NiO layer.However, the values obtained here are low where the largest value is 2.6mT. Thisresult is attributed to weak antiferromagnetic (AFM) coupling at the Co/NiOinterface. These results agree with a blocking temperature of about 300 K. Due tothe low blocking temperature, the AFM interfacial spins direction is tilted withrespect to the ferromagnet magnetization easy axis. As a consequence, the NiOAFM layer manifests at the Co/NiO interface a weak magnetization perpendicularcomponent giving rise to a weak interfacial exchange coupling which leads to lowH_(EB) values.
机译:在磁场下冷却前的退火温度的影响Pt / Co多层中的垂直交换耦合直接耦合到aNIO层在NIO层厚度范围为1-4nm。获得的结果表明,交换偏置(EB)场和磁化反转过程取决于NiO层厚度以及退火温度。观察到正EB场,特别是对于4个Nm厚的NiO层。但是,这里获得的值低,其中最大值为2.6mt。这结果归因于CO / NIO的弱反铁磁(AFM)耦合界面。这些结果达到约300k的阻塞温度。由于低封闭温度,AFM界面旋转方向倾斜尊重铁磁磁化易轴。因此,nioAFM层在CO / NIO接口处表现出垂直的弱磁化成分产生弱界面交换耦合,导致低电平h_(eb)值。

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