机译:在硅衬底上生长的VO_2 MICROROD中的尺寸依赖绝缘体与金属和金属到绝缘子转换
Department of Electrical and Computer Engineering University of Saskatchewan Saskatoon SK S7N 5A9 Canada;
Department of Electrical and Computer Engineering University of Saskatchewan Saskatoon SK S7N 5A9 Canada;
Department of Electrical and Computer Engineering University of Saskatchewan Saskatoon SK S7N 5A9 Canada;
Component Quality and Technology Cisco Systems Inc. 170 West Tasman Drive San Jose CA 95134 USA;
Department of Mechanical Engineering University of Saskatchewan Saskatoon SK S7N 5A9 Canada;
Department of Electrical and Computer Engineering University of Saskatchewan Saskatoon SK S7N 5A9 Canada;
light scattering; mechanical stresses; phase transition; vanadium dioxide microrods;
机译:在蓝宝石衬底上生长的VO_2纳米线的结构和金属到绝缘体的过渡
机译:通过在250℃的低温下施加衬底直流偏压在ZnO /玻璃上生长具有低相变温度的VO_2薄膜
机译:在不同晶体取向的TiO_2衬底上生长的VO_2薄膜的相变特性
机译:硅衬底上VO_2 M1 + B相中的金属转变的绝缘体
机译:通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
机译:半导体纳米线中的Floquet金属到绝缘子相变
机译:无结构的一阶金属绝缘子过渡观察 VO_2中的相变
机译:衬底取向对金属有机气相外延生长Gasb生长速率,表面形貌和硅掺入的影响