Creation and Migration of Intrinsic Defects in Si-Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition

摘要

In this study, low temperature microphotoluminescence technology is used to investigate the development and migration of intrinsic defects in Sidoped diamond. The results demonstrate that NV and SiV luminescence are weakened due to the recombination of selfinterstitials created by electron irradiation in diamond. After annealing at high temperatures, interstitialrelated centers disappear and the vacancy migrate significant distances to isolated N and Si atoms for conversion into NV and SiV centers.