Spectral Characteristics and Spatial Distribution of Thermal Donors in n-Type Czochralski-Silicon Wafers

摘要

In monocrystalline silicon rich in oxygen, thermal donors are formed at temperatures around 450 ℃. These are widely accepted to be electrically active oxygen clusters acting as double donors to the conduction band. Exposure to higher temperatures (650 ℃) reportedly eliminates them. Herein, a systematic study of the spatial distribution of thermal donor formation and elimination by heat treatment at 450 and 650 ℃ in commercial n-type Czochralski-silicon wafers with high and low content of interstitial oxygen atoms are reported. Hyperspectral imaging techniques with spectral and spatial resolution are used. Thermal donors form at 450 ℃ in a ring-like pattern, significantly enhanced in oxygen-rich material. The results indicate the formation of at least six different donor clusters, leading to a strong, characteristic spectral response upon photoexcitation. The emission related to direct band-to-band recombination (1.100 eV) become systematically stronger upon heat treatment at 450 ℃. Subsequent treatment at 650 ℃ rearrange the spectral response into a single, homogenously distributed, broadband emission with peak energy of 0.767 eV. The emission related to band-to-band recombination is significantly reduced. A previously studied emission at 0.807 eV (D1) commonly related to impurities is found, providing evidence that this signal is related to the combination of defects and oxygen.