Nano-Graphite Clusters Regulation for Reliability Improvement of Amorphous Carbon-Based Resistive Random Access Memory

摘要

Herein, the influence of nano-graphite clusters on amorphous carbon-based memories reliability is studied in detail. The size of nano-graphite clusters is effectively controlled through vacuum annealing process, which is experimentally verified by Raman spectra. Taking advantage of the local electric-field enhancement around the nano-graphite clusters, the relative fluctuation of high-resistance state/low-resistance state (HRS/LRS) and SET/RESET voltage reduce from 66.5%/41.2% to 25.3%/19.7% and 43.2%/21.4% to 18.8%/15.4%, respectively. In addition, highly reliable write-once-read-many (WORM) memories with excellent anti-interference and high temperature (300 degrees C) retention capacity are also prepared thanks to the electrical modulating characteristic of graphite clusters to amorphous carbon (a-C) film.