Electron spin resonance characterization of phosphorus-doped CVD diamond films

摘要

Electron spin resonance technique has been applied to characterize defects and to determine local structure of phosphorus in phosphorus-doped (11 I)-homoepitaxially grown CVD diamond films. Dominant defects have g-value similar to that of the HI center in polycrystalline CVD diamond, however, are not accompanied with a unique nearby hydrogen atom. These defects are likely to be located near substrate/epilayer interface. New phosphorus related center with a tetragonal symmetry has been found. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.