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首页> 外文期刊>Physica status solidi >Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications
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Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications

机译:二元和三元复合材料中可控的化学相分离:器件应用中各向同性的光学和电气行为的途径

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There are many applications for nanocrystalline thin films in optical devices that require isotropic optical properties. A novel way to obtain these isotropic properties for the index of refraction and/or optical absorption constant, etc., and at the same time to minimize microscopic strain is presented in this article. This approach is based on strain reduction mecha nisms that occur in the intermediate phases, IPs, of non-crystalline glasses and thin films. In these compositional regiines, either site percolation, or; volume percolation, each above an applicable critical value, provides a quantitative understanding of the microscopic bonding arrangements associated with strain-reducing chemical bonding self-organizations. A similar framework, presented for the firstrntime in this article, develops a microscopic understanding of macroscopic strain reduction in several different phase-separated composites. This understanding has emerged from focussed research on qualitatively different hetero-structure device structure constituents, e.g.; (ⅰ) high-k replacement dielectrics for SiO_2 in field effect transistors gate stacks for advanced semiconductor devices, and (ⅱ) active and passive thin films for optically switched memory cells. In each instance strain reduction and its intrinsic relationship to low densities of defects and defect precursors has provided a driving force in the identification of a narrow range of compositions that satisfy technological needs.
机译:在要求各向同性的光学特性的光学器件中,纳米晶薄膜有许多应用。本文提出了一种新颖的方法来获得折射率和/或光吸收常数等的各向同性,同时最小化微观应变。该方法基于在非晶玻璃和薄膜的中间阶段IP发生的应变减小机制。在这些组成区域中,要么是站点渗流,要么是;体积渗滤,每一个都高于适用的临界值,提供了对与减少应变的化学键自组织相关的微观键排列的定量理解。首次在本文中提出的类似框架,对几种不同的相分离复合材料的宏观应变降低有了微观的了解。这种理解是从对质量不同的异质结构器件结构组成的研究集中得出的,例如(ⅰ)用于高级半导体器件的场效应晶体管栅叠层中SiO_2的高k替代电介质,以及(ⅱ)用于光开关存储单元的有源和无源薄膜。在每种情况下,应变降低及其与缺陷和缺陷前体的低密度的内在联系为确定满足技术需求的窄范围组合物提供了动力。

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