Inverted bottom-emission organic light emitting diodes using MoO_3 for both hole and electron injections

摘要

Inverted bottom-emission organic light emitting diodes (IBO-LEDs) using MoO_3 for both hole and electron injections were fabricated. The IBOLED using 10 nm MoO_3 for hole injection and 5 nm MoO_3/5 nm Li_2CO_3 doped bathocuproine (Li_2CO_3:BCP, 1:4 in mass) for electron injection showed nearly same /-Vcharacteristics as the reference device utilizingrn10 nm MoO_3 for hole injection and 10 nm 1:4 Li_2CO_3:BCP for electron injection, whereas, the former device provided increased current efficiencies than the latter device, as a result of the relieved diffusion of n-typed dopant into the emissive layer in the former device. We provide an efficient, low-cost alternative to realizing the electron injection in IBOLEDs.