Field-effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds

摘要

Solution processed zinc oxide thin films are derived from different organometallic alkoxyalkyl zinc compounds [Zn(OR_1)R_2]_4 and their performance in field-effect transistors (FETs) has been studied systematically. The influence of various residues R_1i or R_2 on the decomposition behaviour of the organometallic precursors and the resulting film morphology is discussed. The performance of the FETs could be enhanced by employment of a post-processing treatment with hydrogen plasma, leading to higher electron carrier mobilities as well as stable on/off ratios.