Metal-insulator-silicon semiconductor photodetectors using ZnO nanocones as an efficient anti-reflective coating

摘要

Novel ZnO nanocone anti-reflective coating (ARC) was realized on ITO-Si rjietal-insulator-semiconductor (MIS) photodetector. The ZnO nanocone-coated device demonstrated significant suppression of reflectance compared with that of a conventional planar device. The ZnO nanocone MIS photodetector showed a 15% enhanced external quantum efficiency (EQE) compared to a planar MIS photodetector, and indicated a flat response over a broad range of wavelength from the visible to ER spectra. In addition, the EQE of the nanocone device exhibited a stable response with respect to the angle of incidence, which indicates improved device characteristics of the ZnO nanocone ARC.