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机译:InGaAsN / GaAs T形量子线的异常激发光相关的光致发光
Faculty of Science, Department of Physics, Khon Kaen University, 123 Mittraphap Rd., Muang, Khon Kaen 40002, Thailand,Nanotec-KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage, Khon Kaen 40002, Thailand,Integrated Nanotechnology Research Center, Khon Kaen University, Khon Kaen 40002, Thailand;
Faculty of Science, Department of Physics, Chulalongkorn University, Phayathai Rd., Patumwan, Bangkok 10330, Thailand;
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, 58183 Linkoeping, Sweden;
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, 58183 Linkoeping, Sweden;
Faculty of Science, Department of Physics, Khon Kaen University, 123 Mittraphap Rd., Muang, Khon Kaen 40002, Thailand,Nanotec-KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage, Khon Kaen 40002, Thailand,Integrated Nanotechnology Research Center, Khon Kaen University, Khon Kaen 40002, Thailand;
Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan;
GaAs; InGaAsN; MOVPE; photoluminescence; quantum wires;
机译:MOVPE生长的GaAsN / GaAs和InGaAsN / GaAs T形量子线的光学研究
机译:与GaAs晶格匹配的InGaAsN T形量子线的MOVPE生长和光学表征
机译:具有GaAsP应变补偿层的高应变InGaAsN / GaAs量子阱(λ= 1.28-1.45μm)的随温度变化的光致发光
机译:激光照射indaasn量子阱的光致发光强度变化
机译:通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光(MU-PL)研究
机译:温度和激发强度对InGaAs / GaAs表面量子点光致发光特性的相互作用
机译:采用生长停顿退火的有机金属气相外延改善InGaasN-(In)Gaasp量子阱的光致发光
机译:与Gaas晶格匹配的InGaasN合金的光致发光研究