MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

摘要

InGaAsN T-shaped quantum wire (T-QWR) lattice-matched to GaAs was grown by metal organic vapour-phase epitaxy (MOVPE) and its optical property was investigated. The InGaAsN T-QWR was observed at the intersection of two InGaAsN quantum wells (QWs) on (001) and (110) surfaces, namely QW1 and QW2, respectively. In, N contents and well-thickness in QW1 and QW2 were determined by high resolution X-ray diffraction (HRXRD). Photoluminescence (PL) was taken to obtain excitonic states in the one-dimensional T-QWR as well as QW1 and QW2. High PL intensity reveals an achievement of high quality T-QWR. At low-temperature, InGaAsN T-QWR exhibits an emission at around 1.141 eV with a large lateral confinement of about 61 and 99 meV for QW1 and QW2, respectively. This method for producing InGaAsN T-QWR may be useful for optical or electronic device applications.