...
机译:掺杂和未掺杂Sb的AgIn_(1-x)Ga_xSe_2和Ag(InGa)_5Se_8薄膜的结构,光学和电学性质
Thin Film Research Laboratory, Union Christian College, Aluva, Kerala, India;
Department of Physics, Hope College, Holland, MI 49423, USA;
Department of Physics, Hope College, Holland, MI 49423, USA;
UGC-DAE CSR, Khandwa Road, Indore-452 001, MP, India;
UGC-DAE CSR, Khandwa Road, Indore-452 001, MP, India;
UGC-DAE CSR, Khandwa Road, Indore-452 001, MP, India;
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai-400076, India;
Thin Film Research Laboratory, Union Christian College, Aluva, Kerala, India;
Thin Film Research Laboratory, Union Christian College, Aluva, Kerala, India;
conductivity; optical properties; ordered vacancy compound; thin films;
机译:AgIn_(1-x)Ga_xSe_2(0≤x≤1.0)薄膜的结构和光学性质的研究
机译:PA-MBE在Si(1 1 1)衬底上生长的未掺杂和Si掺杂的Al_xGa_(1-x)N薄膜的结构,光学和电学性质
机译:前体溶液老化喷雾的结构,光学,电气和催化性能未掺杂,Zn掺杂和Ag掺杂的CDO薄膜
机译:使用RF磁控溅射沉积未掺杂的和掺杂的ZnO薄膜,并研究其结构,光学和电气性能
机译:纳米晶的未掺杂和掺杂的氧化铈薄膜的微结构及其电学和光学性质。
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:未掺杂和掺杂ZnO薄膜的结构,光学和电性能
机译:Cr掺杂和非化学计量V2O3薄膜的电学,结构和光学性质(预印本)