Flip-chip bonding and fabrication of well-ordered nanocolumn arrays on sputter-deposited AlN/Si (111) substrate

摘要

Employing a thin AlN film sputter-deposited on Si substrates, well-ordered GaN nanocolumn arrays were demonstrated by RF-plasma-assisted molecular-beam-epitaxy selective-area growth. Dislocation-free crystals were grown even on this cost-effective framework, which included high-density threading dislocations (＞3 × 10~(11) cm~(-2)), by applying nanocolumn growth techniques. Single-peak PL spectra from integrated InGaN/GaN MQW were obtained in red region and the peak wavelength changed from 640, to 690 nm with increasing nanocolumn diameter. This framework also contributes to a fabrication of vertical injection type flip-chip structure, even if a nanocolumn device. Damage-free wet-etching removal of Si substrates resulted in exposure of flip-chip well-ordered nanocolumns array. (a) TEM image of nanocolumns array on sputter-deposited thin AlN film/Si (111) substrate, (b) SEM image of flip-chip well-ordered nanocolumns array.