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Impedimetric Sensing of DNA with Silicon NanowirernTransistors as Alternative Transducer Principle

机译:硅纳米线晶体管作为替代换能器原理的DNA阻抗感测

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摘要

Silicon nanowires (SiNW) are highly sensitive to biomolecules. In somernpublications, changes of SiNW conductance in relation to their concentrationrnlevels are displayed. Upon binding, biomolecule charges change the surfacernpotential and, thereby, the SiNW conductance. We discussed earlier thatrnSiNWs can be regarded as long-channel, ion-sensitive field-effect transistorsrn(ISFETs). The choice of a stable working point is important and defines thernSiNW conductance. The common detection principle is based on the shift inrnthreshold voltage. Regardless of conductance change or threshold voltagernshift, relative values are related to biomolecule concentrations. However,rnpotentiometric detection suffers from Debye screening of biomoleculerncharges by counter ions of the test solution. This makes biosensing inrnphysiological buffer solutions difficult if not impossible. In this report, arnmethod for impedance sensing with SiNWs, which was earlier used for ISFETrndevices is introduced. This method gains comparable results to potentiometricrnsensing. The change of interface impedance is indirectly linked with thernbiomolecule charges. In addition, the dielectric property of the interface layerrnplays an important role. At elevated frequencies, our method can be regardedrnas an alternative mechanism similar to dielectric spectroscopy at lowrnfrequencies. Thereby, Debye screening does no longer dominate thernrecordings.
机译:硅纳米线(SiNW)对生物分子高度敏感。在某些出版物中,显示了SiNW电导率相对于其浓度水平的变化。结合后,生物分子电荷改变表面电势,从而改变SiNW电导。我们之前讨论过,可以将rnSiNW视为长通道的离子敏感场效应晶体管(ISFET)。选择稳定的工作点很重要,并定义了SiNW电导率。常见的检测原理基于移位阈值电压。无论电导变化或阈值电压偏移如何,相对值都与生物分子浓度有关。然而,电位计检测受到通过测试溶液的抗衡离子对生物分子电荷的德拜筛选的困扰。如果不是不可能的话,这将使生物传感的非生理缓冲溶液变得困难。在此报告中,介绍了用于SiNW的阻抗感测的方法,该方法先前用于ISFETrn器件。该方法获得的结果与电位测量可比。界面阻抗的变化与生物分子电荷间接相关。另外,界面层的介电性质也起重要作用。在较高的频率下,我们的方法可以被视为类似于低频率介电谱的另一种机制。因此,德拜筛选不再占主导地位。

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  • 来源
    《Physica status solidi》 |2018年第15期|1700740.1-1700740.11|共11页
  • 作者单位

    Department of Informatics and Microsystem TechnologyUniversity of Applied Sciences KaiserslauternAmerikastr. 1, 66482 Zweibrücken, Germany;

    Department of Informatics and Microsystem TechnologyUniversity of Applied Sciences KaiserslauternAmerikastr. 1, 66482 Zweibrücken, Germany;

    Department of Informatics and Microsystem TechnologyUniversity of Applied Sciences KaiserslauternAmerikastr. 1, 66482 Zweibrücken, Germany;

    Department of Physics and AstronomyCatholic University LeuvenCelestijnenlaan 200d, 3001 Leuven, Belgium;

    Institute for Materials ResearchHasselt UniversityAgoralaan Building D3590 Diepenbeek, Belgium;

    Department of Informatics and Microsystem TechnologyUniversity of Applied Sciences KaiserslauternAmerikastr. 1, 66482 Zweibrücken, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    DNA; field-effect transistors; impedimetric sensing; nanowires; silicon,rntransistors;

    机译:脱氧核糖核酸;场效应晶体管;阻抗感测纳米线;硅晶体管;

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