Effects of the artificial Ga-nitride/air periodic nanostructures on current injected GaN-based light emitters

摘要

In this report, Ⅲ-nitride/air deeply etched one-dimensional (1D) distributed Bragg reflector (DBR) stacks and two-dimensional (2D) photonic octagonal quasi-crystals (8PQCs) were formed on the GaN-based light emitters by focused Ga ion beam (FIB) milling. The effects of these 1D and 2D GaN/air periodic nanostructures on the properties of the GaN-based light emitters were studied by the measurements of microscopic optical reflection, flourescence, electrical luminescence and current-voltage characteristics.