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Annealing effect on an exchange-biasing Co/IrMn system

机译:退火对交换偏置Co / IrMn体系的影响

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The top-configuration Co(y)/IrMn(90 A) exchange-biasing phenomenon has been studied by sputtering method with two conditions: (a) the substrate temperature (T_s) was kept at room temperature (RT) only, and (b) T_s = RT with an in-plane field (h) = 500 Oe deposition and postdeposition annealing in the field at T_A = 250 ℃ for 1 h, with the samples field cooled to RT. High resolution electron cross-sectional transmission electron microscopy (HR X-TEM) reveals that the IrMn (111) texturing plays a main role to exchange-biasing field (H_(ex)) and interfacial energy (J_k). The H_(ex) versus y result shows that H_(ex) increases when y decreases in case (b). Since J_k = H_(ex)M_sy, where M_s is Co magnetization, it is easy to derive H_(ex) = J_k/(M_sy). Therefore, if H_(ex) is inversely proportional to y, with J_k/M_s constant, we find H_(ex)y = constant. In case (a), H_(ex) is very small in general, while in case (b), H_(ex) is of the order of 60-180 Oe. Moreover, the y dependence of J_k is similar to that of M_s for each curve. Finally, the H_c is inversely proportional to y because of the surface pinning effects from the Ta/Co and Co/IrMn interfaces.
机译:通过两种条件下的溅射方法研究了顶部结构的Co(y)/ IrMn(90 A)交换偏向现象:(a)衬底温度(T_s)仅保持在室温(RT),并且(b )T_s = RT,面内磁场(h)= 500 Oe,在T_A = 250℃的磁场中进行1 h沉积和后沉积退火,样品场冷却至RT。高分辨率电子截面透射电子显微镜(HR X-TEM)显示,IrMn(111)织构在交换偏置场(H_(ex))和界面能(J_k)中起主要作用。 H_(ex)与y的结果表明,在情况(b)中y减小时,H_(ex)增大。由于J_k = H_(ex)M_sy,其中M_s是Co磁化,所以容易推导H_(ex)= J_k /(M_sy)。因此,如果H_(ex)与y成反比,并且J_k / M_s常数,我们发现H_(ex)y =常数。在情况(a)中,H_(ex)通常很小,而在情况(b)中,H_(ex)约为60-180 Oe。此外,对于每条曲线,J_k的y依赖性类似于M_s的y依赖性。最后,由于Ta / Co和Co / IrMn界面的表面钉扎效应,H_c与y成反比。

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