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Temperature dependent domain investigations on exchange biased NiFe/IrMn and CoFe/IrMn systems

机译:逆偏置NiFE / IRMN和COFE / IRMN系统的温度依赖域调查

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For tunneling magnetoresistance (TMR) sensor applications, the magnetic properties of both, the soft magnetic detection layer and of the hard magnetic reference layer, have to be optimized. For the reference layer either artificial antiferromagnet (AAF) subsystems, exchange biased magnetic layers or a combination of the two are commonly used. In this work we studied the magnetic microstructure and magnetization processes of sputtered IrMn/Permalloy, IrMn/CoFe and IrMn/CoFe-AAF systems by Kerr microscopy and magneto-optical magnetometry in a temperature range between 0° and 400°C. A vacuum heating stage in the microscope allowed the in-situ setting of exchange bias by heating and cooling through the blocking temperature. We found that local decoupling phenomena occur over a rather wide temperature range, showing clear dependencies on the material, the direction of the applied field and the thickness of the IrMn antiferromagnetic layer.
机译:对于隧道磁阻(TMR)传感器应用,必须优化软磁检测层和硬磁性参考层的磁性。对于参考层,通常使用人造反霉菌(AAF)子系统,交换偏置磁层或两者的组合。在这项工作中,我们通过Kerr显微镜通过Kerr显微镜和磁光磁力测量在0°和400℃之间的温度范围内研究了溅射的IRMN / PERPOLOY,IRMN / COFE和IRMN / COFE-AAF系统的磁性微观结构和磁化过程。显微镜中的真空加热阶段通过加热和冷却通过阻挡温度,允许原位设定交换偏压。我们发现局部去耦现象发生在相当宽的温度范围内,显示在材料上的清晰依赖性,所施加的场的方向和IRMN反铁磁层的厚度。

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